| PART |
Description |
Maker |
| M36W832TE70ZA1T M36W832TE85ZA1T M36W832TE-ZAT M36W |
SPECIALTY MEMORY CIRCUIT, PBGA66
32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
|
SGS Thomson Microelectronics
NUMONYX
意法半导
ST Microelectronics
|
| M36W416TG 9175 M36W416TGZA M36W416BG70ZA1T M36W416 |
From old datasheet system
16 Mbit 1Mb x16, Boot Block Flash Memory and 4Mbit 256Kb x16 SRAM, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
| AB28F400BX-T90 A28F400BX-B AB28F400BX-B90 |
4-MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY
4-MBIT 256K x16/ 512K x8 BOOT BLOCK FLASH MEMORY FAMILY
JT 23C 2#16 21#20 SKT RECP
JT 32C 32#20 PIN RECP
4-MBIT (256K x16. 512K x8) BOOT BLOCK FLASH MEMORY FAMILY 4兆位56K x16。为512k × 8）启动块闪存系列
4-MBIT (256K x16, 512K x8) BOOT BLOCK FLASH MEMORY FAMILY
|
http://
Intel Corporation
Intel Corp.
Intel, Corp.
|
| M36DR232A M36DR232BZA M36DR232AZA |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product 32兆位Mb x16插槽，双行，页闪存和2兆位128K的x16的SRAM，多个存储产
|
STMicroelectronics N.V.
http://
|
| M36W432 M36W432B M36W432B70ZA1T M36W432B70ZA6T M36 |
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
| M36DR432-ZAT M36DR432A100ZA6T M36DR432A100ZA6C M36 |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product 32兆位Mb x16插槽，双行，页闪存和4兆位256K x16的SRAM，多个存储产
|
意法半导
STMicroelectronics N.V.
|
| M36WT8B10ZA6T M36WT8B70ZA6T M36WT864T70ZA6T M36WT8 |
HEATSHRINK BLACK 4IN X 50FT 64兆位4Mb的x16插槽，多银行，突发闪存和8兆位的SRAM12k x16，内存产品多
64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product 64兆位4Mb的x16插槽，多银行，突发闪存和8兆位的SRAM12k x16，内存产品多
|
STMicroelectronics N.V.
意法半导
|
| SST39LF016 SST39LF016-90-4I-EI SST39VF016-90-4I-EI |
(SST39VF080 / SST39VF016 / SST39LF080 / SST39LF016) 8 Mbit / 16 Mbit (x8) Multi-Purpose Flash
7.6 mm(0.3 inch) Micro Bright Seven Segment Displays
CONNECTOR ACCESSORY
LED Light Bars
D52 - BACKSHELL ENVIRON EMI-RFI STRT MIL 2M X 8 FLASH 2.7V PROM, 70 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 3V PROM, 55 ns, PDSO40
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 3V PROM, 55 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 2.7V PROM, 90 ns, PDSO40
64 Mbit (x16) Multi-Purpose Flash Plus 64兆位（x16）的多功能闪存加
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 2.7V PROM, 70 ns, PDSO40
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| LH28F400BG-TL85 LH28F400BG-L85 LH28F400BG LH28F400 |
4M-BIT (256 x 16) SmartVoltage Flash Memory
4M-BIT (256KB x16) SmartVoltage Flash MEMORY
4M-BIT(256KBx16) SmartVoltage Flash MEMORY
4M-BIT (256K x 16)Smart Voltage Flash Memory
|
SHARP[Sharp Electrionic Components]
|
| MB84VP23481FK-70 MB84VP23481FK-70PBS |
64M (X16) Page FLASH MEMORY & 32M (X16) Mobile FCRAMTM
|
Spansion Inc.
|
| MB84VP2449 MB84VP24491HK MB84VP24491HK-70PBS |
128M (X16) FLASH MEMORY 32M (X16) Mobile FCRAMTM
|
Fujitsu Media Devices Limited
|
| K8D1716UBB-YI07 K8D1716UBB-YI08 K8D1716UBB-YI09 K8 |
16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory 1,600位（200万x8/1M x16）的双银行NOR闪存
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
